2N5550

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High-voltage NPN silicon epitaxial planar small-signal bipolar junction transistor (BJT) housed in a plastic TO-92 package, engineered to deliver high linear gain while handling in tense voltage spikes without signal clipping. Equivalents: 2N5551 (higher voltage upgrade), MPSA42, KST5550, NTE194. Real-Life Examples: Gas-discharge display driver boards (e.g., Nixie tube grids), high-voltage operational amplifier output networks, telephone switching circuit loops, and audio amplifier input stages. [1] Show more